Defect-Mediated Nucleation and Dynamics across the Phase Transition in the Excitonic Insulator Candidate Ta2NiSe5

Ta2NiSe5 is a quasi-one-dimensional material that exhibits a structural and electronic phase transition from a low-temperature monoclinic (semiconductor) to a high-temperature orthorhombic (semimetal) phase at approximately TC = 326 K.

Ta2NiSe5 is a quasi-one-dimensional material that exhibits a structural and electronic phase transition from a low-temperature monoclinic (semiconductor) to a high-temperature orthorhombic (semimetal) phase at approximately TC = 326 K. Here, we used variable-temperature scanning…