Science & ResearchAug 21, 2026
Dirac Surface States and Nonlocal Quantum Tunneling in Topological Semiconductor Mo$_2$SeTe$_3$ for High-Performance Tunnel FETs
A first-principles and device-level study of the quasi-two-dimensional transition-metal chalcogenide Mo$_2$SeTe$_3$ is performed.
A first-principles and device-level study of the quasi-two-dimensional transition-metal chalcogenide Mo$_2$SeTe$_3$ is performed. The material is found to be a weak topological semiconductor with a finite bulk band gap and symmetry-protected Dirac surface states, indicating…
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