Achieving Long Retention in Area-Dependent Resistive Memory with Phase-Separated Amorphous Tantalum Oxide

Resistive random-access memory (ReRAM) is a promising future nonvolatile memory technology.

Resistive random-access memory (ReRAM) is a promising future nonvolatile memory technology. Most ReRAM exhibit a fundamental tradeoff: filament-type ReRAM provides long data retention but suffers from poor uniformity and high switching current, whereas nonfilamentary ReRAM shows…